Liu noted that the LED industry has begun recovering since the second quarter as undercutting competition among the manufacturers has less intensive. He estimated price decline in the LED market to be less than 5% in the second half.
So far, a 7W LED light bulb has marked down to the US$10 range and is expected to further drop at a double digit rate until the end of 2013, Liu estimated. At the same time,LED high bay light are gaining penetration rate mostly thanks to increased uses in TVs and tablet PCs.
Kyma’s new product offering is called the Kyma100 HVPE System and leverages over a decade of company experience in the design, construction, and application of HVPE process equipment for manufacturing GaN materials. It’s high purity, vertical flow, hot wall design supports production of n-type conductive GaN at growth rates up to 500 μm per hour. The background impurity concentration is less than 1x1017cm‐3. Complete with a process for production of high quality GaN on sapphire templates, the system can grow up to three 2-inch diameter wafers or one 4-inch diameter wafer at a time.
“Demand for our AlN and GaN template products is growing, yet many of our volume customers prefer to bring the template manufacturing process in-house,” says Keith Evans, Kyma president & CEO. “Adding LED linear high bay light equipment to our product line is a natural step in Kyma’s growth, and represents the first of several new equipment product offerings we plan to announce in the coming weeks.”
So far, a 7W LED light bulb has marked down to the US$10 range and is expected to further drop at a double digit rate until the end of 2013, Liu estimated. At the same time,LED high bay light are gaining penetration rate mostly thanks to increased uses in TVs and tablet PCs.
Kyma’s new product offering is called the Kyma100 HVPE System and leverages over a decade of company experience in the design, construction, and application of HVPE process equipment for manufacturing GaN materials. It’s high purity, vertical flow, hot wall design supports production of n-type conductive GaN at growth rates up to 500 μm per hour. The background impurity concentration is less than 1x1017cm‐3. Complete with a process for production of high quality GaN on sapphire templates, the system can grow up to three 2-inch diameter wafers or one 4-inch diameter wafer at a time.
“Demand for our AlN and GaN template products is growing, yet many of our volume customers prefer to bring the template manufacturing process in-house,” says Keith Evans, Kyma president & CEO. “Adding LED linear high bay light equipment to our product line is a natural step in Kyma’s growth, and represents the first of several new equipment product offerings we plan to announce in the coming weeks.”
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