According to Unity executives, as LED backlight is gradually replacing CCFLs, the LED TV penetration rate is expected to surge to 65~70% this year from 40% of last year. It is estimated that the LED TVs will amount for 80% of total TV shipments by the end of 2012, sharply up from 50% seen in the beginning of this year.
In addition, aside from South Korean TV manufacturers, Taiwanese and Chinese TV manufacturers also moved to launch new products in Q2 of 2012, and will launch direct-type TV products with energy saving functions sometime in Q3. As a result, Unity executives thought that as China’s price subsidy policy is expected to boost the LED TV sales there, the company’s LED packing business is estimated to grow further.
Chantal Arena, vice president and general manager of Soitec Phoenix Labs, where the HVPE technology was developed, said, "Our strategy was to use production-proven silicon epitaxy equipment features and add our innovative gallium source and delivery system to create a high productivity HVPE equipment. We then successfully developed high growth rate processes that combined with our low cost precursor leads to a more cost effective GaN template than the ones produced by metal organic vapor phase epitaxy (MOVPE)."
"Silian is excited to work with Soitec and adopt its HVPE technology," said David Reid, COO of Silian. "With our extensive sapphire substrate manufacturing expansion activities in China, we are very well positioned to take advantage of this opportunity and offer these high quality templates in a cost effective manner to our sapphire substrate customers."
In addition, aside from South Korean TV manufacturers, Taiwanese and Chinese TV manufacturers also moved to launch new products in Q2 of 2012, and will launch direct-type TV products with energy saving functions sometime in Q3. As a result, Unity executives thought that as China’s price subsidy policy is expected to boost the LED TV sales there, the company’s LED packing business is estimated to grow further.
Chantal Arena, vice president and general manager of Soitec Phoenix Labs, where the HVPE technology was developed, said, "Our strategy was to use production-proven silicon epitaxy equipment features and add our innovative gallium source and delivery system to create a high productivity HVPE equipment. We then successfully developed high growth rate processes that combined with our low cost precursor leads to a more cost effective GaN template than the ones produced by metal organic vapor phase epitaxy (MOVPE)."
"Silian is excited to work with Soitec and adopt its HVPE technology," said David Reid, COO of Silian. "With our extensive sapphire substrate manufacturing expansion activities in China, we are very well positioned to take advantage of this opportunity and offer these high quality templates in a cost effective manner to our sapphire substrate customers."
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